Non‐Hermitian Topolectrical Circuit Sensor with High Sensitivity

• DOI: 10.1002/advs.202301128
• Publication Date: 2023-04-25T11:45:27Z
• Authors: Hao Yuan; Weixuan Zhang; Zilong Zhou; Wenlong Wang; Naiqiao Pan; Yue Feng; Houjun Sun; Xiangdong Zhang
• Keywords: non‐Hermitian skin effects; Condensed Matter - Mesoscale and Nanoscale Physics; Science; Q; Mesoscale and Nanoscale Physics (cond-mat.mes-hall); topological state; FOS: Physical sciences; 7. Clean energy; electronic sensors; topolectrical circuits; Research Articles

AbstractElectronic sensors play important roles in various applications, such as industry and environmental monitoring, biomedical sample ingredient analysis, wireless networks and so on. However, the sensitivity and robustness of current schemes are often limited by the low quality‐factors of resonators and fabrication disorders. Hence, exploring new mechanisms of the electronic sensor with a high‐level sensitivity and a strong robustness is of great significance. Here, a new way to design electronic sensors with superior performances based on exotic properties of non‐Hermitian topological physics is proposed. Owing to the extreme boundary‐sensitivity of non‐Hermitian topological zero modes, the frequency shift induced by boundary perturbations can show an exponential growth trend with respect to the size of non‐Hermitian topolectrical circuit sensors. Moreover, such an exponential growth sensitivity is also robust against disorders of circuit elements. Using designed non‐Hermitian topolectrical circuit sensors, the ultrasensitive identification of the distance, rotation angle, and liquid level is further experimentally verified with the designed capacitive devices. The proposed non‐Hermitian topolectrical circuit sensors can possess a wide range of applications in ultrasensitive environmental monitoring and show an exciting prospect for next‐generation sensing technologies.