Tunable Emissive CsPbBr3/Cs4PbBr6 Quantum Dots Engineered by Discrete Phase Transformation for Enhanced Photogating in Field‐Effect Phototransistors

Quantum Efficiency Cyan Photodiode
DOI: 10.1002/advs.202401973 Publication Date: 2024-06-22T04:46:31Z
ABSTRACT
Abstract Precise control of quantum structures in hybrid nanocrystals requires advancements scientific methodologies. Here, on the design tunable CsPbBr 3 /Cs 4 PbBr 6 dots are reported by developing a unique discrete phase transformation approach Cs nanocrystals. Unlike conventional systems that emit solely green region, this current strategy produces adjustable luminescence blue (450 nm), cyan (480 and (510 nm) regions with high photoluminescence yields up to 45%, 60%, 85%, respectively. Concentration‐dependent studies reveal mechanisms factors drive CsBr removal occur at lower dilutions while dissolution–recrystallization process dominates higher dilutions. When polymer‐CsPbBr integrated into field‐effected transistor resulting phototransistors featured enhanced photosensitivity exceeding 10 5 , being highest for an n ‐type phototransistor, maintaining good performances as compared devices consisting NCs.
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