Highly Stable Electronics Based on β‐Ga2O3 for Advanced Memory Applications

• DOI: 10.1002/advs.202413846
• Publication Date: 2025-02-06T07:23:20Z
• Authors: Xiaoxi Li; Yu‐Chun Li; Yingguo Yang; Bitao Dong; Yuhang Liu; Lina Li; Linfeng Pan; Gengsheng Chen; Yue Hao; Genquan Han
• Keywords: Science; Q; stability; β‐Ga2O3/h‐BN heterostructure; wide‐bandgap semiconductors; dynamic random‐access memory

AbstractWide‐bandgap (WBG) semiconductors are at the forefront of driving innovations in electronic technology, perpetuating Moore's Law and opening up new avenues for electronic devices. Although β‐Ga2O3 has attracted extensive research interest in advanced electronics, its high‐temperature and high‐speed volatile memory applications in harsh environment has been largely overlooked. Herein, a high‐performance hexagonal boron nitride (h‐BN)/β‐Ga2O3 heterostructure junction field‐effect transistor (HJFET) is fabricated, exhibiting an off‐state current as low as ≈10 fA, a high on/off current ratio of ≈108, a low contact resistance of 5.6 Ω·mm, and an impressive field‐effect electron mobility of 156 cm2 （Vs）−1. Notably, the current h‐BN/β‐Ga2O3 HJFET exhibits outstanding thermal reliability in the ultra‐wide temperature range from 223 to 573 K, as well as long‐term environmental stability in air, which confirms its inherent capability of operation in harsh environments. Moreover, the h‐BN/β‐Ga2O3 HJFET demonstrates successful applications for accelerator‐in‐memory computing fields, including dynamic random‐access memory structure and neural network computations. These superior characteristics position β‐Ga₂O₃‐based electronics as highly promising for applications in extreme environments, with particular relevance to the automotive, aerospace, and sensor sectors.