Mixed‐Halide Perovskite Memristors with Gate‐Tunable Functions Operating at Low‐Switching Electric Fields

• DOI: 10.1002/aelm.202300424
• Publication Date: 2023-10-03T06:05:21Z
• Authors: Konstantinos Rogd...; Konstantinos Chat...; George Psaltakis; Nikolaos Tzoganakis; Dimitris Tsikritzis; Thomas D. Anthopo...; Emmanuel Kymakis
• Keywords: Memristor; Switching time

Abstract Crossbar circuits based on two terminal (2T) memristors typically require an additional unit such as a transistor for individual node selection. A memristive device with gate‐tunable synaptic functionalities will not only integrate selection functionality at the cell level but can also lead to enriched on‐demand learning schemes. Here, three‐terminal (3T) mixed‐halide perovskite functions operating low potentials is demonstrated. The operation controlled by both drain ( V D ) and gate G potentials, extended endurance of >2000 cycles state retention >5000 s. Applying voltage set 20 across 50 µm channel switches its conductance from high‐resistance (HRS) low‐resistance (LRS). switching mechanism proposed that supported current injection models through Schottky barrier Kelvin probe force microscopy data. simultaneous application potential found further modulate reduce 2 V, thus requiring electric field 400 cm −1 , which factor 50× less compared state‐of‐the‐art literature reports. Gate‐tunable retention, endurance, are demonstrated, highlighting beneficial effect operation.