Chemical Bath Deposition of NiOx‐NiSO4 Heterostructured Hole Transport Layer for Perovskite Solar Cells

• DOI: 10.1002/aesr.202200055
• Publication Date: 2022-09-20T18:33:25Z
• Authors: Benben Shen; Mengjiong Chen; Fan Zhang; Da Liu; Xinyi Liu; Jin Xie; Shuang Yang; Yu Hou; Hua Gui Yang
• Keywords: Non-blocking I/O; Chemical bath deposition; Deposition

Herein, the scalable chemical bath deposited NiO x ‐NiSO 4 heterostructured films are reported as efficient hole transport layers (HTLs) in perovskite solar cells. The show excellent extraction ability and reduce interfacial charge recombination cell devices. By using HTLs, a high power conversion efficiency of 20.55% is obtained, which about 12.23% greater than that pure layer. This study provides simple solution‐processing route toward large‐area production fabrication full inorganic for photovoltaics.