Nitronyl Nitroxide Radicals as Organic Memory Elements with Both n‐ and p‐Type Properties

• DOI: 10.1002/anie.201004899
• Publication Date: 2011-04-07T14:40:06Z
• Authors: Junghyun Lee; Eunkyo Lee; Sangkwan Kim; Gyeong Sook Bang; David A. Shultz; Robert D. Schmidt; Malcolm D. E. Forbes; Hyoyoung Lee
• Keywords: 02 engineering and technology; 0210 nano-technology; 01 natural sciences; 0104 chemical sciences

Can't fight the SEEPR: Simultaneous electrochemical electron paramagnetic resonance reveals that a molecule containing nitronyl nitroxide (NN) radical (structure and red layer) is redox-active, with switchability between oxidized reduced states. An organic NN device utilizes dual p- n-type properties in memory device.