Enhanced Photoelectrochemical Activity Realized from WS2 Thin Films Prepared by RF‐Magnetron Sputtering for Water Splitting
Chemistry
660
Industrial electrochemistry
WS2 thin films
Materials Engineering (formerly Metallurgy)
RF-magnetron sputtering
Photoelectrochemical activity
530
QD1-999
Nanostructures
TP250-261
DOI:
10.1002/celc.202400002
Publication Date:
2024-02-19T13:25:20Z
AUTHORS (14)
ABSTRACT
AbstractWe report the synthesis of tungsten sulfide (WS2) films using RF‐magnetron sputtering at different RF powers. X‐ray diffraction (XRD) data confirm the hexagonal crystal structure of WS2 with an average crystallite size of ∼44.54 Å. With increased RF power, the preferred orientation of WS2 crystallites shifts from (002) to (100). Linear sweep voltammetry (LSV) was used to assess the Photoelectrochemical (PEC) activity of WS2 films. The film deposited at 150 W demonstrated the highest photocurrent density of 5.44 mA/cm2. The 150 W film also showed a lower Tafel slope of ∼0.374 V/decade, indicating superior PEC activity. Mott Schottky's (MS) analysis revealed a notable shift in the flat band potential towards the negative side, suggesting a shifting of the Fermi level towards the conduction band. WS2 film grown at 150 W demonstrated a majority charge carrier density of 6.2×1021 cm−3 and a depletion layer width of 1.54 nm. The observed low charge transfer resistance of 155 Ω contributed to the enhanced PEC activity with a relaxation time constant of 37 ms. These properties suggest that WS2 can be suitable for PEC water splitting.
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