Dark Current Mechanisms and Suppression Strategies for Infrared Photodetectors Based on Two‐Dimensional Materials

• DOI: 10.1002/lpor.202300936
• Publication Date: 2023-12-20T20:03:40Z
• Authors: Xinlei Zhang; Ruizhi Li; Yuanfang Yu; Fuxing Dai; Ruiqi Jiang; Jiaxiang Guo; Weida Hu; Zhenhua Ni; Junpeng Lu
• Keywords: 01 natural sciences; 0104 chemical sciences

Abstract Narrow‐bandgap 2D materials and semimetals, for example, graphene, black phosphorus (BP), tellurium (Te), some novel transition metal dichalcogenides (TMDs), have been demonstrated to be promising building blocks constructing next‐generation state‐of‐the‐art infrared (IR) photodetectors. However, these devices suffer from a significant dark current, primarily attributed the intrinsic thermal excitation‐induced high carrier concentration. Suppressing current is an essential issue in pursuing higher specific detectivity of IR Here, authors demonstrate recent advances suppressing First, brief insight into composition mechanisms photodetectors illustrated. Then, varied band alignment blocking by interfacial barrier discussed. Next, localized electric field modulation applying gate voltage ferroelectric This method can effectively tune concentration distribution carriers device conductive channel. Following that, engineering summarized, which defects passivated interlayer defect‐induced suppressed. Finally, challenges outlook are delivered developing