Characteristics of large‐scale nanohole arrays for thin‐silicon photovoltaics

• DOI: 10.1002/pip.2291
• Publication Date: 2012-10-01T08:11:24Z
• Authors: Ting‐Gang Chen; Peichen Yu; Shih‐Wei Chen; Feng‐Yu Chang; Bo‐Yu Huang; Yu‐Chih Cheng; Jui‐Chung Hsiao; Chi‐Kang Li; Yuh‐Renn Wu
• Keywords: Nanosphere lithography

ABSTRACT Nanostructured crystalline silicon is promising for thin‐silicon photovoltaic devices because of reduced material usage and wafer quality constraint. This paper presents the optical characteristics nanohole (SiNH) arrays fabricated using polystyrene nanosphere lithography reactive‐ion etching (RIE) techniques large‐area processes. A post‐RIE damage removal subsequently introduced to mitigate surface recombination issues also suppress reflection due modifications in sidewall profile, resulting a 19% increase power conversion efficiency. We show that treatment can effectively recover carrier lifetime dark current–voltage SiNH solar cells resemble planar counterpart without RIE damages. Furthermore, reflectance spectra exhibit broadband omnidirectional anti‐reflective properties, where an AM1.5 G spectrum‐weighted achieves 4.7% arrays. Finally, three‐dimensional modeling has been established investigate dimension thickness dependence light absorption. conclude reveal great potential efficient harvesting photovoltaics with 95% reduction compared typical cell 200 µm. Copyright © 2012 John Wiley & Sons, Ltd.