Characteristics of large‐scale nanohole arrays for thin‐silicon photovoltaics

Nanosphere lithography
DOI: 10.1002/pip.2291 Publication Date: 2012-10-01T08:11:24Z
ABSTRACT
ABSTRACT Nanostructured crystalline silicon is promising for thin‐silicon photovoltaic devices because of reduced material usage and wafer quality constraint. This paper presents the optical characteristics nanohole (SiNH) arrays fabricated using polystyrene nanosphere lithography reactive‐ion etching (RIE) techniques large‐area processes. A post‐RIE damage removal subsequently introduced to mitigate surface recombination issues also suppress reflection due modifications in sidewall profile, resulting a 19% increase power conversion efficiency. We show that treatment can effectively recover carrier lifetime dark current–voltage SiNH solar cells resemble planar counterpart without RIE damages. Furthermore, reflectance spectra exhibit broadband omnidirectional anti‐reflective properties, where an AM1.5 G spectrum‐weighted achieves 4.7% arrays. Finally, three‐dimensional modeling has been established investigate dimension thickness dependence light absorption. conclude reveal great potential efficient harvesting photovoltaics with 95% reduction compared typical cell 200 µm. Copyright © 2012 John Wiley & Sons, Ltd.
SUPPLEMENTAL MATERIAL
Coming soon ....
REFERENCES (32)
CITATIONS (47)
EXTERNAL LINKS
PlumX Metrics
RECOMMENDATIONS
FAIR ASSESSMENT
Coming soon ....
JUPYTER LAB
Coming soon ....