High efficiency triple junction thin film silicon solar cells with optimized electrical structure

• DOI: 10.1002/pip.2564
• Publication Date: 2014-11-17T09:24:54Z
• Authors: Bofei Liu; Lisha Bai; Ze Chen; Xiaodan Zhang; Dekun Zhang; Jian Ni; Qian Huang; Changchun Wei; Jian Sun; Xinliang Chen; Huizhi Ren; Guofu Hou; Guangcai Wang; Ying Zhao
• Keywords: Triple junction; p–n junction; Tunnel junction; Open-circuit voltage

Abstract We report on improving the performance of pin‐type a‐Si:H/a‐SiGe:H/µc‐Si:H triple‐junction solar cells and corresponding single‐junction in this paper. Based wet‐etching sputtered aluminum‐doped zinc oxide (ZnO:Al) substrates with optimized surface morphologies photo‐electrical material properties, after adjusting individual utilized various optimization techniques, we pay close attention to tunnel recombination junctions (TRJs). By means a‐Si:H/a‐SiGe:H a‐SiGe:H/µc‐Si:H double‐junction cells, compensated for open circuit voltage ( V oc ) loss at TRJ by adopting a p‐type µc‐Si:H layer low activation energy. combining top/middle, middle/bottom TRJs little electrical losses, an initial efficiency 15.06% was achieved cells. Copyright © 2014 John Wiley & Sons, Ltd.