Electron radiation–induced degradation of GaAs solar cells with different architectures

• DOI: 10.1002/pip.3224
• Publication Date: 2020-01-08T15:18:40Z
• Authors: Natasha Gruginskie; Federica Cappelluti; Gerard J. Bauhuis; Peter Mulder; Erik J. Haverkamp; Elias Vlieg; John J. Schermer
• Keywords: Carrier lifetime; Electron beam processing; Degradation

Abstract The effects of electron irradiation on the performance GaAs solar cells with a range architectures is studied. Solar shallow and deep junction designs processed native wafer as well into thin‐film were irradiated by 1‐MeV electrons fluence up to 1×10 15 e − /cm 2 . degradation cell due was studied experimentally theoretically using model simulations, coherent set minority carriers' lifetime damage constants derived. primarily depends depth thickness active layers, whereas material shows be insensitive architecture fabrication steps. modeling study has pointed out that besides reduction carriers lifetime, strongly affects quality hetero‐interfaces, an effect scarcely addressed in literature. It demonstrated linear increase surface recombination velocity at front rear hetero‐interfaces accurately describes spectral response dark current characteristic upon irradiation. A device lowest sensitivity radiation, showing efficiency end life equivalent 82% beginning‐of‐life efficiency.