Impact of excitation energy on hot carrier properties in InGaAs multi‐quantum well structure

• DOI: 10.1002/pip.3599
• Publication Date: 2022-06-18T07:09:33Z
• Authors: Hamidreza Esmaiel...; Laurent Lombez; Maxime Giteau; Jean‐François Gui...; Daniel Suchet
• Keywords: Thermalisation; Laser linewidth

Abstract Hot carrier solar cells aim to overcome the theoretical limit of single‐junction photovoltaic devices by suppressing thermalization hot carriers and extracting them through energy selective contacts. Designing efficient absorbers requires further investigation on properties in materials. Although is responsible for a large portion loss cells, it still one least understood phenomena semiconductors. Here, impact excitation photo‐generated an InGaAs multi‐quantum well (MQW) structure at various lattice temperatures powers studied. Photoluminescence (PL) emission sample detected hyperspectral luminescence imager, which creates spectrally spatially resolved PL maps. The thermodynamic carriers, such as temperature quasi‐Fermi‐level splitting, are carefully determined via applying full spectrum fitting, solves Fermi–Dirac integral considers band‐filling effect nanostructured material. In addition, thermalized power density scattering with longitudinal optical phonons spectral linewidth broadening under two energies