Physics‐based modeling and experimental implications of trap‐assisted tunneling in InGaN/GaN light‐emitting diodes

• DOI: 10.1002/pssa.201431743
• Publication Date: 2015-02-01T10:39:41Z
• Authors: Marco Mandurrino; Giovanni Verzellesi; Michele Goano; Marco Vallone; Francesco Bertazzi; Giovanni Ghione; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni
• Keywords: Trap (plumbing); Atmospheric temperature range

In a combined experimental and numerical investigation, we present the effects of trap‐assisted tunneling on sub‐threshold forward bias characteristics blue InGaN/GaN single‐quantum‐well LED test structure grown SiC substrate. The different role donor‐ acceptor‐like traps has been studied, for information it can provide played by point defects. Using energy E t trap density N as only tunneling‐related fitting parameters, behavior measured I ( V ) curves is well reproduced our model over wide current temperature range. very good agreement between simulations experiments suggests that one most relevant contributions to flow below optical turn‐on diode.