Indium Phosphide Membrane Nanophotonic Integrated Circuits on Silicon

• DOI: 10.1002/pssa.201900606
• Publication Date: 2019-12-03T15:42:13Z
• Authors: Yuqing Jiao; Jos van der Tol; Vadim Pogoretskii; Jorn van Engelen; Amir Abbas Kashi; Sander Reniers; Yi Wang; Xinran Zhao; Weiming Yao; Tianran Liu; Francesco Pagliano; Andrea Fiore; Xuebing Zhang; Zizheng Cao; Rakesh Ranjan Kumar; Hon Ki Tsang; Rene van Veldhoven; Tjibbe de Vries; Erik-Jan Geluk; Jeroen Bolk; Huub Ambrosius; Meint Smit; Kevin Williams
• Keywords: membranes; photonic integration; 0103 physical sciences; nanophotonics; indium phosphide; waveguides; photonic integrated circuits; semiconductor laser; 7. Clean energy; 01 natural sciences

Photonic integration in a micrometer‐thick indium phosphide (InP) membrane on silicon (IMOS) offers intrinsic and high‐performance optoelectronic functions together with high‐index‐contrast nanophotonic circuitries. Recently demonstrated devices have shown competitive performances, including high side‐mode‐suppression ratio (SMSR) lasers, ultrafast photodiodes, and significant improvement in critical dimensions. Applications of the IMOS devices and circuits in optical wireless, quantum photonics, and optical cross‐connects have proven their performances and high potential.