Quantitative Evaluation of Thermal Conductivity of Single‐Bent Microwire Using Vanadium Dioxide Temperature Tag

• DOI: 10.1002/pssa.202100348
• Publication Date: 2021-10-16T17:44:33Z
• Authors: Runqing Huang; Yaxuan Zhao; Zixu Wang; Yichen Gan; Nan Shen; Abbas Amini; Run Shi; Chun Cheng
• Keywords: XXXXXX - Unknown; 02 engineering and technology; 0210 nano-technology

Stress/strain engineering is believed to be an effective way adjust the thermal conductivity of materials dynamically or as needed. Compared with bulk materials, micro‐/nanoscale structures can withstand greater stress/deformations that lead evident changes in their after undergoing stress/strain; this phenomenon has been predicted by theoretical simulations. Nevertheless, measuring a single wire small size upon controllable bending angles faced major challenges. Herein, method using VO 2 tag temperature indicator developed achieve situ quantitative measurement bent silicon microwires (MWs), where thermally insulated spider silk used position suspended end wires for different angles. It found Si increases and then decreases subsequent bending; it indicates MWs tuned bending. Further studies reveal variation reversible (elastic) irreversible large (plastic). With setup, new thermophysical properties are explored at scales, possible stress/strain‐gated switches emerge.