High Performance of Liquid‐Gated Silicon Nanowire FETs Covered with Ultrathin Layers of Diamond‐Like Tetrahedral Amorphous Carbon

• DOI: 10.1002/pssa.202300024
• Publication Date: 2023-03-22T17:27:51Z
• Authors: Nazarii Boichuk; Yurii Kutovyi; Denys Pustovyi; Yongqiang Zhang; Volker Weihnacht; Svetlana Vitusevich

Label‐free, low‐noise, and ultrahigh‐sensitive biosensors based on liquid‐gated silicon (Si) nanowire (NW) field‐effect transistors (FETs) have recently emerged as promising diagnostic tools that can be used for healthcare monitoring point‐of‐care applications. However, the sensing capabilities performance of such devices still critically depend several factors, including quality intrinsic properties materials used. In particular, important role determining device is assigned to gate insulator layer, which acts a surface in NW‐based requires optimization. Herein, advanced multilayer structures: Si NW/SiO 2 /diamond‐like carbon FETs, are investigated. The high diamond‐like layer obtained by low‐temperature physical vapor deposition confirmed X‐ray photoelectron spectroscopy Raman studies. Current–voltage noise reflect high‐quality transport these structures.