Electrical properties and carrier transport mechanisms of nonvolatile memory devices based on randomly oriented ZnO nanowire networks

• DOI: 10.1002/pssr.201105146
• Publication Date: 2011-05-25T12:08:06Z
• Authors: H. J. Wang; C. W. Zou; L. Zhou; C. X. Tian; M. K. Lee; J. C. Lee; T. W. Kang; D. J. Fu
• Keywords: Non-Volatile Memory; Ohmic contact

Abstract We report reproducible bipolar resistive memory devices based on Au/ZnO nanowire networks (ZnO NWNs)/ITO, which show a high R / off ratio (∼10 4 ) and narrow dispersion of set reset threshold voltages. The dominant conduction mechanisms low resistance state were verified by Ohmic behavior space charge limited current, respectively. switching mechanism is confirmed in terms the formation rupture conductive filaments, with oxygen vacancies localized ZnO NWNs surface involved in. NWNs/ITO presented our work potential applications next generation nonvolatile field. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)