GaN Quantum Dots in Resonant Cavity Nanopillars as Deep‐UV Single‐Photon Sources

• DOI: 10.1002/pssr.202400188
• Publication Date: 2024-10-24T08:53:56Z
• Authors: Hannes Schürmann; Frank Bertram; Gordon Schmidt; Peter Veit; Olga August; Christoph Berger; Armin Dadgar; André Strittmatter; Julius Kullig; Jan Wiersig; Kang Gao; Mark Holmes; Yasuhiko Arakawa; Jürgen Christen
• Keywords: Nanopillar; Single-Photon Source

Herein, integrating GaN quantum dots (QDs) within a resonant cavity is focused on. Utilizing metal‐organic vapor phase epitaxy, controlled growth of QDs on AlN achieved. A deep‐UV distributed Bragg reflector (DBR) with high reflectivity in the 250–300 nm range, using and Al 0.7 Ga 0.3 N layers to maximize refractive index contrast, developed. 50‐period DBR achieves 98% at wavelength 272 nm. Scanning transmission electron microscopy energy loss spectroscopy analyses reveal trisection periods, attributed composition pulling effect during growth. The real structure's simulated matched well measured data, though actual lower than ideal. Cathodoluminescence studies T = 17 K show emission peaks from both QDs. Further, single‐photon demonstrated g (2) ( t 0) value 0.41 272.7 nm, confirming potential for sources. Additionally, creation planar enhanced intensity vertical nanopillar structures an aspect ratio 11 diameter 400 confirm successful integration advanced UV photonic structures.