P‐22: High Performance a‐IGZO TFT Backplanes with Cu Gate and Source/Drain Electrodes for AMOLED Displays

• DOI: 10.1002/sdtp.10057
• Publication Date: 2015-07-29T20:27:43Z
• Authors: Xiaming Zhu; Chunsheng Jiang; Guangcai Yuan; Wei Liu; Xuyuan Li; Longbao Xin; Meili Wang; Gang Wang
• Keywords: Backplane; AMOLED

We have developed the fabrication processes for bottom gate and etch stopper‐type a‐IGZO TFT with Cu source/drain electrodes. After optimizing multi‐layer stack structure of insulator, deposition a‐ IGZO stopper layers, tuning post‐annealing treatments, performance stability backplanes were improved evidently. In this report, we discussed improvements in uniformity reliability electrodes by processes. Finally, 14‐ inch qHD 55‐inch ultra high‐definition AMOLED panels driven high stable successfully developed.