69-3: 806-ppi 4K2K LC Display using Top-gate Self-aligned CAAC-OS FET

• DOI: 10.1002/sdtp.10882
• Publication Date: 2016-05-25T23:35:18Z
• Authors: Hideaki Shishido; Kei Takahashi; Kouhei Toyotaka; Daisuke Kubota; Tetsuji Ishitani; Yoshiharu Hirakata; Shunpei Yamazaki; Masahiro Katayama; Natsumi Matsuo; Akihiro Oda; Takuya Matsuo
• Keywords: Parasitic capacitance

We developed a high-mobility oxide semiconductor material and made 5.46″ prototype of 806-ppi 4K2K liquid crystal display using CAAC-OS FET that has top-gate structure. The structure caused the parasitic capacitance to be small, resulting in bezel width 0.675 mm.