16.3: A Method to Improve The Reliability of T/G IGZO AMOLED Flex Panel
0301 basic medicine
0303 health sciences
DOI:
10.1002/sdtp.16243
Publication Date:
2023-08-03T22:12:50Z
AUTHORS (9)
ABSTRACT
For large OLEDs, the amorphous InGaZnO (a‐IGZO) thin film
transistor is considered as the next generation of flexible
backplane technology due to its high mobility, good uniformity,
low off‐state current and low process temperature. However, the
reliability of a‐IGZO TFT with OLED flexible encapsulation
material is inferior at high temperature, which is speculated that
the downward diffusion of H in flexible encapsulation materials
leads to the threshold voltage drifting to negative. We successfully
prepared a self‐aligned top‐gate IGZO thin film transistor
backplane for flexible AMOLED display with a layer of metal
oxide (MOX) that can effectively block H. The backplane has
excellent electrical performance and reliability, which can meet
the requirements of flexible display devices.
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