16.3: A Method to Improve The Reliability of T/G IGZO AMOLED Flex Panel

• DOI: 10.1002/sdtp.16243
• Publication Date: 2023-08-03T22:12:50Z
• Authors: Shuai Zheng; YuanJun Hsu; Yi He; Zhaosong Liu; Lin Zhenguo; Liu Yunxi; Weiran Cao; Yuan-chun Wu; Xin Zhang
• Keywords: AMOLED; Backplane

For large OLEDs, the amorphous InGaZnO (a‐IGZO) thin film transistor is considered as next generation of flexible backplane technology due to its high mobility, good uniformity, low off‐state current and process temperature. However, reliability a‐IGZO TFT with OLED encapsulation material inferior at temperature, which speculated that downward diffusion H in materials leads threshold voltage drifting negative. We successfully prepared a self‐aligned top‐gate IGZO for AMOLED display layer metal oxide (MOX) can effectively block H. The has excellent electrical performance reliability, meet requirements devices.