16.3: A Method to Improve The Reliability of T/G IGZO AMOLED Flex Panel
AMOLED
Backplane
DOI:
10.1002/sdtp.16243
Publication Date:
2023-08-03T22:12:50Z
AUTHORS (9)
ABSTRACT
For large OLEDs, the amorphous InGaZnO (a‐IGZO) thin film transistor is considered as next generation of flexible backplane technology due to its high mobility, good uniformity, low off‐state current and process temperature. However, reliability a‐IGZO TFT with OLED encapsulation material inferior at temperature, which speculated that downward diffusion H in materials leads threshold voltage drifting negative. We successfully prepared a self‐aligned top‐gate IGZO for AMOLED display layer metal oxide (MOX) can effectively block H. The has excellent electrical performance reliability, meet requirements devices.
SUPPLEMENTAL MATERIAL
Coming soon ....
REFERENCES (4)
CITATIONS (1)
EXTERNAL LINKS
PlumX Metrics
RECOMMENDATIONS
FAIR ASSESSMENT
Coming soon ....
JUPYTER LAB
Coming soon ....