P‐7.2: Suppression of Ion Drop of ITO‐Decapped a:Si‐H TFT for ADS Pro Display

• DOI: 10.1002/sdtp.16389
• Publication Date: 2023-08-04T02:12:50Z
• Authors: Dan Liu; Zhonghao Huang; Xu Wu; Xu Luo; Wenxiang Chen; Fang Wu; Shufang Zhang; GaoBin Liu; Liang Fang
• Keywords: Degradation

The decay of Ion ADS Pro‐type TFTs experienced 1ITO decap often brings about a lot TFT devices scrapped. It is necessary and valuable to identify the reasons solve drop problem induced by decap. In present work, difference in procedure electronic performance between normal process was first compared, then series controlled confirmation experiments get mechanism I on were designed carried out. found that not extra etching, but additional ITO film deposition cause degradation; during process, plasma cleaning would lead damage silicon island, O atoms target intrude into form p‐type doping or SiOx oxide, giving rise decrease carrier concentration increase resistance, which eventually account for drop. Finally, measures suppress degradation caused proposed verified, it shows percentage will decline from 15% 8.9%, 12.2% 10.6% turning off cleaning, cutting down power, reducing annealing temperature, respectively. And when these three above methods are combined introduction together, after can be further lower less than 5%, meets requirements mass production. This study provides way reference optimize properties improve product yield.