Infrared reflection investigation of ion‐implanted and post‐implantation‐annealed epitaxially grown 6H‐SiC

• DOI: 10.1002/sia.1411
• Publication Date: 2002-10-06T12:21:52Z
• Authors: W. Chang; Z. C. Feng; J. Lin; R. Liu; A. T. S. Wee; K. Tone; J. H. Zhao
• Keywords: Atmospheric temperature range

Abstract Multiple energy Al + and C ions were implanted into 6H‐SiC at room temperature (25°C) elevated (600°C), respectively, followed by 1550°C annealing for 30 min. Fourier transform infrared spectroscopy was used to evaluate the optical properties in mid‐infrared range. An effective medium model, taking account presence of an implantation‐induced amorphous phase, developed establish relationship between changes modification structure. Complete amorphization layer evidenced implantation but no such case occurred implantation. Elimination or decrease via annealing, represented recovery reflectance intensity shape. Some structural parameters, as thickness phonon damping constants amorphized SiC, derived from fitting measured data. Our work demonstrated successful application Lorentz–Drude oscillator model evaluating lattice quality amorphous/crystalline SiC system. Copyright © 2002 John Wiley & Sons, Ltd.