XPS depth profile analysis of non‐stoichiometric NiO films

• DOI: 10.1002/sia.1640
• Publication Date: 2004-01-14T08:00:35Z
• Authors: S. Oswald; W. Brückner
• Keywords: Non-blocking I/O; Stoichiometry

Abstract Antiferromagnetic NiO films used for pinning layers in spin valve systems were prepared by reactive sputtering from an target with variation of the oxygen/argon mixture sputter gas. Using XPS depth profiling we investigated x overstoichiometry ( > 1) that was found other methods and chemical changes during annealing. A direct detection Ni 3+ failed because strong preferential formation metallic sputtering. By means factor analysis a qualitative description is possible. Indirectly it could be shown already formed oxide It can concluded stability decreases increasing deviation stoichiometry 1). Copyright © 2004 John Wiley & Sons, Ltd.