Epitaxial Growth of 2D Binary Phosphides

• DOI: 10.1002/smtd.202301512
• Publication Date: 2024-01-04T18:29:24Z
• Authors: Wenjin Gao; Wenzhen Dou; Dechun Zhou; Biyu Song; Tianchao Niu; Chenqiang Hua; Andrew Thye Shen Wee; Miao Zhou
• Keywords: 02 engineering and technology; 0210 nano-technology

Abstract Combinations of phosphorus with main group III, IV, and V elements are theoretically predicted to generate 2D binary phosphides extraordinary properties promising applications. However, experimental synthesis is significantly lacking. Here, a general approach for preparing reported using single crystalline surfaces containing the constituent element target materials as substrate. To validate this, SnP 3 BiP, representing typical phosphides, successfully synthesized on Cu 2 Sn bismuthene, respectively. Scanning tunneling microscopy imaging reveals hexagonal pattern Sn, while α‐BiP can be epitaxially grown α‐bismuthene domain Sb. First‐principles calculations reveal that formation associated strong interface bonding significant charge transfer, interacts weakly so its semiconducting property preserved. The study demonstrates an attractive avenue atomic‐scale growth via substrate phase engineering.