Optoelectronic Properties of Layered Perovskite Solar Cells
Open-circuit voltage
Quantum Efficiency
Quantum yield
DOI:
10.1002/solr.201900126
Publication Date:
2019-05-14T08:21:40Z
AUTHORS (7)
ABSTRACT
Herein, the optoelectronic properties of interface‐engineered perovskite 2D|3D‐heterojunction structure solar cells are reported. The reciprocity theorem is applied to determine maximum open‐circuit voltage ( V oc ) device can deliver under illumination. A 1.295 found, analyzing measured external quantum efficiency and assuming only radiative recombination. For comparison, experimental found for studied 2D|3D heterojunctions 1.15 V. contribution nonradiative recombination explored by measuring electroluminescence yield. yield 0.4% at current densities equivalent 1 sun This translates into a loss ≈140 mV, which in very good agreement with findings. In addition, fundamental correlation between luminescence intensity chemical potential predicted generalized Planck law confirmed photoluminescence different light intensities when operated conditions forward bias. investigations this study suggest that further improvements be achieved reducing cell. At same time, high‐performance near IR emitting diode realized.
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