Influence of Thermal Activation on Polysilicon Tunnel Junctions for Tunnel Oxide Passivating Contacts‐Based Perovskite/Silicon Tandem Solar Cells

• DOI: 10.1002/solr.202400876
• Publication Date: 2025-04-04T08:18:00Z
• Authors: Mario Hanser; Johannes Gry; Armin Richter; Jana‐Isabelle Polzin; Jan Benick; Martin Bivour; Christian Reichel; Stefan W. Glunz
• Keywords: Tandem

The presented investigation focuses on different thermal activation processes and their influence the formation of a polysilicon tunnel junction as recombination layer in perovskite/silicon tandem solar cells. goals this are optimization comparison processing pathways to enable lean process integration. Various routes with annealing sequences for were examined, using laser‐based rapid (RTP) conventional furnace anneal. main challenge is control interdiffusion p‐ well n‐type dopants at interface during process. On pre‐annealed n‐tunnel oxide passivating contact (TOPCon) layers, low temperature p‐polysilicon beneficial without necessity an additional diffusion blocking layer. If n‐TOPCon annealed simultaneously one RTP, high temperatures required, which enabled by SiN x interlayer interface. Optimized junctions TOPCon bottom cell precursors show resistivity only 30 mΩ cm 2 implied open‐circuit voltage 726 mV. These results demonstrate promising properties developed regarding