Electrochemical Metallization Memristive Devices with Al Active Electrode Using Engineered Mixed Hexagonal/Orthorhombic Polycrystalline YMnO3

• DOI: 10.1002/sstr.202300494
• Publication Date: 2024-02-02T08:54:43Z
• Authors: Rong Wu; Sebastian W. Schmitt; Florian Maudet; Dong Jik Kim; Veeresh Deshpande; Catherine Dubourdieu
• Keywords: Orthorhombic crystal system

We report electrochemical metallization (ECM) resistive switching in polycrystalline YMnO 3 memristive devices using Al as an active electrode. Al/YMnO /Pt exhibit bipolar with a high R OFF / ON ratio of 10 4 , low operational voltages V Set ≈ 1.7 and Reset −0.36 good retention properties. The is intimately linked to the coexistence orthorhombic hexagonal phases. characterization these two nanocrystalline phases realized not only by X‐ray diffraction – which shown be unable reveal presence phase but also set correlative microscopy spectroscopy methods (scanning electron microscopy, optical Raman conductive atomic force microscopy). origin ascribed filament‐based mechanism that likely occurs along oxygen‐deficient grain boundary between unique microstructure provided mixed films allows use electrode ‐based ECM cells, gives perspective for further miniaturization devices.