Growth control, interface behavior, band alignment, and potential device applications of 2D lateral heterostructures

• DOI: 10.1002/wcms.1353
• Publication Date: 2017-11-29T18:09:17Z
• Authors: Jijun Zhao; Kai Cheng; Nannan Han; Junfeng Zhang
• Keywords: Interface (matter)

Two‐dimensional (2D) lateral heterostructures open a new avenue for intentional design of novel 2D devices with superior electronic and optoelectronic properties. Since 2012, many groups have successfully synthesized graphene/ h ‐BN on metal substrates the fabrication in‐plane transition dichalcogenides has also been reported since 2014. In this review, we first present an overview recent progress experimental fabrications heterostructures, along growth mechanism from atomistic simulations. The atomic structures interfaces, thermal transport properties across interfaces some heterojunctions are then discussed. Our current theoretical understanding band alignments as well potential device applications these summarized. Finally, give perspective fast‐growing field. WIREs Comput Mol Sci 2018, 8:e1353. doi: 10.1002/wcms.1353 This article is categorized under: Structure Mechanism > Computational Materials Science