Bonding mechanism between silicon carbide and thin foils of reactive metals

• DOI: 10.1007/bf00552387
• Publication Date: 2004-11-23T05:16:14Z
• Authors: S. Morozumi; M. Endo; M. Kikuchi; K. Hamajima
• Keywords: 02 engineering and technology; 0210 nano-technology

Pressureless-sintered SiC pieces and SiC single crystals were joined with foils of reactive metals at 1500° C (1773 K) for titanium and zirconium foils or at 1000° C (1273 K) for Al/Ti/Al foils. Bend testing at various temperatures up to 1400° C (1673 K), optical and electron microscopy, and electron-probe X-ray microanalysis studies were carried out on the specimens. From the results, it was concluded that the fairly high bond strength of titanium-foil joined SiC specimens might be attributed to the formation of a Ti3SiC2 compound, since good lattice matching between SiC and Ti3SiC2 was obtained in the SiC single crystals. Also in the Al/Ti/Al-foil joined SiC, high bond strength was obtained, but it decreased steeply at 600° C (873 K) because of a retained aluminium phase. The bond strength in the zirconium-foil joined SiC was low.