Noise associated with reverse anneal phenomenon in high current arsenic-implanted silicon

• DOI: 10.1007/bf00702928
• Publication Date: 2004-11-30T14:06:53Z
• Authors: D. M. Liou; J. Gong; C. Y. H. Tsai

Reverse anneal phenomenon was observed in high current arsenic-implanted silicon samples and was pronounced with increasing implantation current. Noise measurements were used to study this phenomenon, the noise spectrum was composed of 1/f noise and generation-recombination (g-r) noise. The Hooge parameter α, usually a constant for the 1/f noise in homogeneous samples, was found to be a function of annealing temperature and the measured g-r noise values which may reflect the activation percentage of implanted atoms under different annealing temperatures were in good agreement with theoretical predictions.