Stability of thin silicon targets exposed to a high-flux beam of relativistic electrons

• DOI: 10.1007/bf00851723
• Publication Date: 2004-12-24T04:07:50Z
• Authors: B. R. Meshcherov; V. I. Tumanov
• Keywords: Relativistic electron beam

In the study of the penetration of relativistic electrons through a silicon single crystal it was first observed that the orientation effect is affected by target heating. This is due to nonuniform thermal expansion and resultant stresses which increase with the electron current and cause the crystal to lose its flat shape. We propose a simple model which describes well the measurement results. This establishes a limit for the current in orientation-effect applications.