High quality, high-k gate dielectric: amorphous LaAlO3 thin films grown on Si(100) without Si interfacial layer

• DOI: 10.1007/s00339-002-2069-1
• Publication Date: 2003-11-24T18:10:09Z
• Authors: L. Yan; H.B. Lu; G.T. Tan; F. Chen; Y.L. Zhou; G.Z. Yang; W. Liu; Z.H. Chen
• Keywords: 02 engineering and technology; 0210 nano-technology

High-k dielectric amorphous LaAlO3 thin films have been grown on n-type Si(100) substrates by laser molecular beam epitaxy. The interfacial characteristics of the LaAlO3 films on Si were measured by high-resolution transmission electron micrography and X-ray photoemission spectroscopy. A sharp interface without a silica inter-layer between the LaAlO3 film and Si substrate was observed. Atomic force microscopy measurements indicated that the root-mean-square surface roughness within a 2μm×2μm area of the LAO films was 0.12 nm. The flatband voltage and fixed charge density of the 8 nm thickness LaAlO3 films were about 0.355 V and 1.8×1012/cm2, respectively. The leakage currents of the LaAlO3/Si(100) samples with different film thicknesses of 5, 8 and 12 nm were 0.45, 0.23 and 0.05 mA/cm2, respectively, at a +1 V dc bias voltage. LaAlO3 appears to be one of the most promising high dielectric constant materials for use in future ultra large scale integrated devices.