Effect of (HfO2) X (Al2O3)1−X /SiO2 double-layered blocking oxide on program and erase speed in charge trapping memory devices

• DOI: 10.1007/s00339-016-9719-1
• Publication Date: 2016-02-25T08:15:27Z
• Authors: Jinho Oh; Eun Jung Ko; Heedo Na; Dae-Hong Ko; Hyunchul Sohn
• Keywords: 02 engineering and technology; 0210 nano-technology

In this work, the effect of hole injection into the charge trap layers from channel prior to program operation is investigated in charge trapping (CT) memory with stacked blocking oxide (BO). For efficient hole injection, a (HfO2) X (Al2O3)1− X /SiO2 stacked BO structure is used. The CT memory device with stacked BO shows faster programming and erasing speed compared with single-layered SiO2 BO. The enhanced programming speed is attributed to the enhanced electric field introduced by excess holes injected into SiN charge trap layer. In addition, efficient hole injection from channel produced the widened memory window in CT memory.