Determination of carrier lifetime in thermally evaporated In2S3 thin films by light induced transient grating technique

• DOI: 10.1007/s00339-020-03495-5
• Publication Date: 2020-04-01T06:16:11Z
• Authors: S. Rasool; P. Ščajev; K. Saritha; I. Svito; K. T. Ramakrishna...; M. S. Tivanov; V. Grivickas
• Keywords: 0103 physical sciences; ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика; 01 natural sciences

In2S3 thin films were deposited onto soda lime glass substrates using thermal evaporation technique at a constant substrate temperature of 300 °C and the films were annealed in a sulfur ambient at 250 °C and 300 °C for 1 h. Light induced transient grating (LITG) technique was used to determine the carrier lifetime in In2S3 thin films. The determined carrier lifetime values for different excitation energy densities, I0 = 0.06–1.64 mJ/cm2 decreased from 206 to 18 ps and 150 to 14 ps for the films annealed at 250 °C and 300 °C respectively. Further, the bimolecular, Auger recombination coefficients and diffusion coefficient were determined in the films. The observed bimolecular carrier recombination origin was explained by interface and Auger recombination processes.