Nanocrystal-size-sensitive third-harmonic generation in nanostructured silicon

• DOI: 10.1007/s00340-003-1121-y
• Publication Date: 2004-03-19T19:09:52Z
• Authors: L.A. Golovan; L.P. Kuznetsova; A.B. Fedotov; S.O. Konorov; D.A. Sidorov-Biry...; V.Y. Timoshenko; A.M. Zheltikov; P.K. Kashkarov
• Keywords: 0103 physical sciences; 7. Clean energy; 01 natural sciences

Third-harmonic generation (THG) in reflection geometry was studied in nanostructured silicon layers grown by electrochemical porosifying of p-type (110) silicon substrates. An order of magnitude enhancement of the THG efficiency compared to crystalline silicon (c-Si) was observed for the samples prepared on a highly doped substrate, whereas for the samples grown on a low-doped substrate the THG was much less efficient than for c-Si. The finding is discussed in terms of fluctuations of the electric field of the pump-laser irradiation in the layers of anisotropically distributed silicon nanocrystals.