Anisotropy of photocurrent for two-photon absorption photodetector made of hemispherical silicon with $(\overline{1}10)$ plane

• DOI: 10.1007/s00340-008-3263-4
• Publication Date: 2008-10-29T01:39:56Z
• Authors: B. Shi; X. Liu; Z. Chen; G. Jia; K. Cao; Y. Zhang; S. Wang; C. Ren; J. Zhao
• Keywords: 0202 electrical engineering, electronic engineering, information engineering; 02 engineering and technology; 7. Clean energy

We fabricated a hemispherical nearly-intrinsic Si-based photodetector with ( \(\bar{1}10)\) plane. The photocurrent generated from the detector under a continuous wave laser at the wavelength of 1.3 μm was observed. The photocurrent shows a quadratic dependence on the incident optical power. The dependence of the photocurrent on the azimuth of the incident optical field is consistent with the anisotropy of the two-photon absorption in Si crystals. The ratio of the two nonzero independent components of the third-order susceptibility of silicon is obtained to be 0.42 from the observed result of the anisotropy of the photocurrent.