On the performance of short pulse Nd 3+ :LSB microchip lasers

• DOI: 10.1007/s003400100681
• Publication Date: 2002-10-06T16:11:21Z
• Authors: M.B. Danailov; A.A. Demidovich; A.N. Kuzmin; O.V. Kuzmin; V.L. Hait
• Keywords: Pulse duration; Q-switching; Saturable absorption

Experimental results from studies of the laser characteristics of Nd:LSB crystals in both cw and passive Q-switching arrangements are presented. The dependence of the main laser parameters on the output coupling and saturable absorber transmission for two doping levels of Nd was investigated. It is demonstrated that due to its high absorption, low losses and intrinsic strong thermal lensing, even at pump powers of less than 200 mW, the Nd:LSB has excellent properties in terms of efficiency, beam quality and pulse duration. In addition, it exhibits high pulse-to-pulse and pulse width versus pump power stability.