Drain current modelling of unipolar junction dual material double-gate MOSFET (UJDMDG) for SoC applications

• DOI: 10.1007/s00542-019-04691-x
• Publication Date: 2019-11-20T21:01:28Z
• Authors: A. Basak; M. Chanda; A. Sarkar
• Keywords: 0103 physical sciences; 7. Clean energy; 01 natural sciences

A simple continuous analytical model is developed for the drain current of unipolar junction dual material double gate MOSFET (UJDMDG). The model is based on electrostatic potentials obtained from the solution of Poisson’s equation using parabolic approximation method, surface potential, electric field, threshold voltage roll-off and drain current are explicitly modelled. Analytical results are verified and validated by comparing it with the result obtained from Silvaco TCAD ATLAS device simulator making it suitable for circuit design simulations. A comparative study of the short-channel effects (SCEs) for UJDMDG and unipolar junction single material double gate MOSFET (UJSMDG) structures has been carried out in order to show the efficacy of gate material engineering to suppress SCEs. Moreover, the variation of RF and analog figure of merits as a function of downscaled gate lengths has been reported. To exhibit the superiority in RF/analog performance of UJDMDG over UJSMDG MOSFETs, the analog/RF performance parameters has been studied and compared for SoC applications.