Micro materials modeling in MINIMOS-NT

• DOI: 10.1007/s005420000076
• Publication Date: 2003-02-12T20:54:09Z
• Authors: V. Palankovski; S. Selberherr
• Keywords: 0202 electrical engineering, electronic engineering, information engineering; 02 engineering and technology

Considerable effort was spent on our two-dimensional device simulator MINIMOS-NT to get it ready for simulation of devices with high complexity in respect to materials, geometries, etc. Many of the existing physical models (band gap, mobility, thermal conductivity, energy relaxation times, specific heat, etc.) were refined, some of them were replaced by promising new ones, and many new models were added as well. Being an ancestor of the well-known MOS device simulator MINIMOS [1], its experience with Si devices was inherited. Thereby, MINIMOS-NT became a generic device simulator accounting for a variety of micro-materials, including group IV semiconductors, III-V compound semiconductors and their alloys, and non-ideal dielectrics.