Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation

• DOI: 10.1007/s10765-014-1602-8
• Publication Date: 2014-04-17T09:48:36Z
• Authors: Qian Wang; Bincheng Li; Shengdong Ren; Qiang Wang
• Keywords: Recrystallization (geology)

The activation and recrystallization in arsenic ion-implanted silicon under excimer laser (193 nm) irradiation is investigated using photocarrier radiometry (PCR). Arsenic ion-implanted silicon wafers with a dose of and an energy of 1 keV were irradiated at different laser parameters, such as the laser fluence, shot number, and repetition rate. The excimer laser irradiation-induced enhancement of PCR signals of implanted silicon samples showed that the implantation-induced crystalline structural damage was reduced and the implanted ions were effectively activated.