Incoherent transport in NEMO5: realistic and efficient scattering on phonons

• DOI: 10.1007/s10825-016-0845-y
• Publication Date: 2016-06-17T16:12:10Z
• Authors: James Charles; Prasad Sarangapani; Roksana Golizadeh...; Robert Andrawis; Daniel Lemus; Xinchen Guo; Daniel Mejia; James E. Fonseca; Michael Povolotskyi; Tillmann Kubis; Gerhard Klimeck
• Keywords: Nanodevice; Phonon scattering

In this work, the coherent and incoherent transport simulation capabilities of the multipurpose nanodevice simulation tool NEMO5 are presented and applied on transport in tunneling field-effect transistors. The comparison with experimental resistivity data confirms the validity of NEMO5's phonon-scattering models. Common pitfalls of numerical implementations and the applicability of common approximations of scattering self-energies are discussed. The impact of phonon-assisted tunneling on the performance of TFETs is exemplified with a concrete Si nanowire device. The communication-efficient implementation of self-energies in NEMO5 is demonstrated with a scaling comparison of self-energies solved with blocking and nonblocking MPI-communication.