HSPICE model and circuit simulation for a single-event effect caused by ions at different incident positions

• DOI: 10.1007/s10825-018-1201-1
• Publication Date: 2018-06-15T12:51:26Z
• Authors: Tengyue Yi; Yi Liu; Zhenyu Wu; Chen Shen; Yintang Yang
• Keywords: 0103 physical sciences; 01 natural sciences

A 3D model of the negative-channel metal-oxide semiconductor (NMOS) structure in a 65-nm complementary metal-oxide semiconductor (CMOS) inverter was built based on technology computer-aided design (TCAD) three-dimensional (3D) device simulation software. The single-event effect caused by a heavy ion at different incident positions was simulated and analyzed using the TCAD–HSPICE mixed-mode simulation. Then, an analytical model was established to describe the relationship between the incident position of the ion and the charge collected by the NMOS drain. Finally, an HSPICE simulation approach based on this model was developed and verified by simulations.