Effect of annealing temperature on dielectric and pyroelectric property of highly (111)-oriented (Pb0.98La0.02)(Zr0.95Ti0.05)0.995O3 thin films

• DOI: 10.1007/s10854-014-2610-y
• Publication Date: 2014-12-19T02:00:26Z
• Authors: Tian-Fu Zhang; Xin-Gui Tang; Qiu-Xiang Liu; Yan-Ping Jiang; De-Ping Xiong; Zu-Yong Feng; Tie-Dong Cheng
• Keywords: 2. Zero hunger; 0103 physical sciences; 01 natural sciences; 7. Clean energy; 3. Good health

Highly (111)-oriented lanthanum modified lead zirconate titanate (Pb0.98La0.02)(Zr0.95Ti0.05)0.995O3 thin films with the thickness of 300 nm were fabricated by a sol–gel method. Electrical measurements were conducted on (Pb0.98La0.02)(Zr0.95Ti0.05)0.995O3 thin films. Well-saturated hysteresis loops were achieved with an applied voltage of 19 V. Dielectric constant and dielectric loss as a function of frequency for (Pb0.98La0.02)(Zr0.95Ti0.05)0.995O3 thin films annealed at 670 °C were measured. Dc bias field dependence of dielectric constant and dielectric loss were conducted at room temperature; the dielectric tunability of (Pb0.98La0.02)(Zr0.95Ti0.05)0.995O3 thin film annealed at 670 °C was 20.3 %. The pyroelectric coefficient of films was measured by a dynamic technique. The pyroelectric coefficients of (Pb0.98La0.02)(Zr0.95Ti0.05)0.995O3 thin films annealed at 570, 620 and 670 °C were 208, 244 and 192 μC/m2 K, respectively. It was found that the pyroelectric property was highly depended on the annealing temperature.