Characterization of Sn-doped β-Ga2O3 films deposited on MgO (100) substrate by MOCVD

• DOI: 10.1007/s10854-015-3440-2
• Publication Date: 2015-07-01T08:25:23Z
• Authors: Wei Mi; Jin Ma; Zhao Li; Caina Luan; Hongdi Xiao
• Keywords: Tin oxide

Tin-doped gallium oxide (Ga2O3:Sn) films have been deposited on single crystalline MgO (100) substrates by metal organic chemical vapor deposition technique. The tin content was varied from 5 to 20 % (atomic ratio). After annealing in the atmosphere, all the samples show the β phase with the epitaxial relationship of β-Ga2O3 ( $$ \overline{6} 01 $$ ) ∥ MgO (100). The average transmittance for the annealed samples in visible range exceeds 89 %. The resistivity of the films doped with Sn can be effectively decreased by almost five orders of magnitude. A narrow and strong violet photoluminescence from 390 to 430 nm is observed at room temperature and this violet emission is enhanced after Sn-doping.