Annealing effects on the performances of Bismuth-doped Indium Zinc Oxide thin-film transistors

• DOI: 10.1007/s10854-019-01655-9
• Publication Date: 2019-06-10T14:02:52Z
• Authors: Dong Lin; Xudong Zheng; Jianwen Yang; Kaiwen Li; Jingjing Shao; Qun Zhang
• Keywords: Bismuth

In this work, annealing effects on the characteristics of bismuth-doped indium zinc oxide (IZBO) thin films and the electrical properties of IZBO thin-film transistors (TFTs) were investigated. The X-ray diffraction results reveal that all the IZBO thin films have an amorphous structure regardless of different annealing temperatures. In addition, all the a-IZBO thin films exhibit high transmittance in the visible light region. It is found that the annealing temperature has strong influences on the performances of a-IZBO TFTs. The devices annealed at 400 °C exhibit optimum performances with a field effect mobility of 25.4 cm2 V−1 s−1, a subthreshold swing of 0.22 V decade−1, a threshold voltage of −1.4 V and an on-to-off current ratio of 4.3 × 107. Stability of the devices under positive bias stress and negative bias stress were studied as well.