Microstructure and Improved J c–H Characteristic of Sr2Nb2O7-Doped Y0.5Gd0.5Ba2Cu3O7−x Thin Film Prepared by Pulsed Laser Deposition

• DOI: 10.1007/s10948-016-3852-0
• Publication Date: 2016-10-19T22:05:15Z
• Authors: LinFei Liu; Xiang Wu; YanJie Yao; BinBin Wang; SaiDan Lu; YiJie Li
• Keywords: Pulsed Laser Deposition

Sr2Nb2O7 (SNO)-doped Y0.5Gd0.5Ba2Cu3O7−x (YGBCO) and pure YGBCO thin films with pure c-axis orientation were prepared by pulsed laser deposition. Compared with a pure YGBCO film, T c and critical current density (J c) (77 K, 0 T) of the SNO-doped film decreased from 91.9 to 88.7 K and from 4.2 to 2.5 MA/cm2, respectively. SNO-doped YGBCO film exhibited significantly enhanced J c in a magnetic field up to 9 T at 4.2 K and up to 7 T at 65 K for B//C, indicating that the SNO-doped YGBCO film possessed more effective flux pinning centers, which were stacking faults, c-axis defects, and inclined defects identified by transmission electron microscopy analysis.