Optical and transport phenomena in CdO:La films prepared by sol-gel method

• DOI: 10.1007/s10971-007-1615-x
• Publication Date: 2007-08-21T13:00:04Z
• Authors: A. A. Dakhel; A. Y. Ali-Mohamed
• Keywords: Degenerate semiconductor; Spin Coating

A series of lightly La-doped CdO thin films (1%, 5%, and 7%) have been prepared by a spin coater sol-gel technique on amorphous glass and crystalline Si substrates. Those prepared films were studied by X-ray diffraction (XRD), UV-VIS-NIR absorption spectroscopy, and dc-electrical measurements. The investigation shows that La doping grows slightly the CdO lattice parameter and decreases the intrinsic energygap from 2.1 eV to 1.7 eV. The optical properties were easily explained in the framework of classical Drude theory and thus all the corresponding parameters were determined. The electrical behaviour of the samples shows that they are degenerate semiconductors until the atomic percentage of the La dopant was 7% then the sample was converted into a non-degenerate semiconductor. Generally, it was observed that the conductivity and mobility of the carriers were decreased by increasing the La content in the CdO film samples.