Effects of growth behaviors on chemical and physical properties of sol–gel derived ZnO:Ga films

• DOI: 10.1007/s10971-010-2249-y
• Publication Date: 2010-06-01T20:24:53Z
• Authors: Keh-moh Lin; Yu-Yu Chen; Chiao-yuan Chiu
• Keywords: Tube furnace

In this study, we investigated the effects of different heating processes on the structural, electrical and chemical properties of ZnO:Ga (GZO) films from the viewpoint of nucleation and growth behaviors. An infrared heating furnace and a traditional tube furnace were employed for the homogeneous and heterogeneous nucleation of GZO films. XRD patterns demonstrated that the preferential growth orientation of both kinds of GZO films is still the (002) direction. XPS data implied that the infrared heating process enables more uniform distribution of the dopant material and retards the oxidization of gallium in grain boundary areas. At the same time, the textured crystallite might provide a free tunnel for oxygen diffusion. Thus, the activation of free charge carriers could be more efficient when the GZO films were annealed under vacuum. As a result, the samples annealed by the infrared heating furnace had a noticeably high carrier concentration. Although the mobility was slightly smaller than that of the samples annealed by the tube furnace, film resistivity dropped obviously in general.