Plasma-assisted nitrogen doping of VACNTs for efficiently enhancing the supercapacitor performance

• DOI: 10.1007/s11051-016-3470-6
• Publication Date: 2016-06-08T23:53:10Z
• Authors: Alireza Mashayekhi; Seyed Mahmoud Hos...; Morteza Hassanpou...; Naser Namdar; Zeinab Sanaee
• Keywords: 02 engineering and technology; 0210 nano-technology; 7. Clean energy

Nitrogen doping of vertically aligned carbon nanotubes (VACNTs) using plasma-enhanced chemical vapour deposition has been investigated to improve the supercapacitance performance of CNTs. Incorporating electrochemical measurements on the open-ended nitrogen-doped CNTs, showed the achievement of 6 times improvement in the capacitance value. For nitrogen-doped CNTs on silicon substrate, specific capacitance of 60 F g−1 was obtained in 0.5 M KCl solution, with capacity retention ratio above 90 % after cycled at 0.1 A g−1 for 5000 cycles. Using this sample, a symmetric supercapacitance was fabricated which showed the power density of 37.5 kW kg−1. The facile fabrication approach and its excellent capacitance improvement, propose it as an efficient technique for enhancing the supercapacitance performance of the carbon-based electrodes.